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1 IPD60R180P7 rev.2.1,2017-02-17 final data sheet dpak mosfet 600vcoolmosap7powertransistor thecoolmos?7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowermosfets,designedaccordingtothesuperjunction (sj)principleandpioneeredbyinfineontechnologies.the600v coolmos?p7seriesisthesuccessortothecoolmos?p6series.it combinesthebenefitsofafastswitchingsjmosfetwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentesdcapability. furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler. features ?suitableforhardandsoftswitching(pfcandllc)duetoanoutstanding commutationruggedness ?significantreductionofswitchingandconductionlosses ?excellentesdrobustness>2kv(hbm)forallproducts ?betterrds(on)/packageproductscomparedtocompetitionenabledbya lowrds(on)*a(below1ohm*mm2) ?largeportfoliowithgranularrds(on)selectionqualifiedforavarietyof industrialandconsumergradeapplicationsaccordingtojedec(j-std20 andjesd22) benefits ?easeofuseandfastdesign-inthroughlowringingtendencyandusage acrosspfcandpwmstages ?simplifiedthermalmanagementduetolowswitchingandconduction losses ?increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kvesd protection ?suitableforawidevarietyofapplicationsandpowerranges applications pfc,hardswitchingpwmandresonantswitchingpowerstages.e.g.pc silverbox,adapter,lcd&pdptv,lighting,server,telecom&ups pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 650 v r ds(on),max 180 m w q g.typ 25 nc i d,pulse 53 a e oss @400v 2.6 j body diode di/dt 900 a/s type/orderingcode package marking relatedlinks IPD60R180P7 pg-to 252-3 60r180p7 see appendix a tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 18 11 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 53 a t c =25c avalanche energy, single pulse e as - - 56 mj i d =4a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.28 mj i d =4a; v dd =50v; see table 10 avalanche current, single pulse i as - - 4.0 a - mosfet dv/dt ruggedness dv/dt - - 80 v/ns v ds =0...400v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation p tot - - 72 w t c =25c storage temperature t stg -55 - 150 c - operating junction temperature t j -55 - 150 c - mounting torque - - - - ncm - continuous diode forward current i s - - 18 a t c =25c diode pulse current 2) i s,pulse - - 53 a t c =25c reverse diode dv/dt 3) dv/dt - - 50 v/ns v ds =0...400v, i sd <=18a, t j =25c see table 8 maximum diode commutation speed di f /dt - - 900 a/ m s v ds =0...400v, i sd <=18a, t j =25c see table 8 insulation withstand voltage v iso - - - v v rms , t c =25c, t =1min 1) limited by t j max . maximum duty cycle d = 0.50 2) pulse width t p limited by t j,max 3) identical low side and high side switch with identical rg tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 1.74 c/w - thermal resistance, junction - ambient r thja - - 62 c/w device on pcb, minimal footprint thermal resistance, junction - ambient for smd version r thja - 35 45 c/w device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70m thickness) copper area for drain connection and cooling. pcb is vertical without air stream cooling. soldering temperature, wavesoldering only allowed at leads t sold - - 260 c reflow msl1 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet 3electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 600 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 3 3.5 4 v v ds = v gs , i d =0.28ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =600, v gs =0v, t j =25c v ds =600, v gs =0v, t j =150c gate-source leakage current i gss - - 1000 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.145 0.341 0.180 - w v gs =10v, i d =5.6a, t j =25c v gs =10v, i d =5.6a, t j =150c gate resistance r g - 11 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 1081 - pf v gs =0v, v ds =400v, f =250khz output capacitance c oss - 19 - pf v gs =0v, v ds =400v, f =250khz effective output capacitance, energy related 1) c o(er) - 33 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 2) c o(tr) - 311 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 14 - ns v dd =400v, v gs =13v, i d =5.6a, r g =10 w ;seetable9 rise time t r - 12 - ns v dd =400v, v gs =13v, i d =5.6a, r g =10 w ;seetable9 turn-off delay time t d(off) - 85 - ns v dd =400v, v gs =13v, i d =5.6a, r g =10 w ;seetable9 fall time t f - 8 - ns v dd =400v, v gs =13v, i d =5.6a, r g =10 w ;seetable9 table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 6 - nc v dd =400v, i d =5.6a, v gs =0to10v gate to drain charge q gd - 8 - nc v dd =400v, i d =5.6a, v gs =0to10v gate charge total q g - 25 - nc v dd =400v, i d =5.6a, v gs =0to10v gate plateau voltage v plateau - 5.2 - v v dd =400v, i d =5.6a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to400v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =5.6a, t j =25c reverse recovery time t rr - 175 - ns v r =400v, i f =2a,d i f /d t =100a/s; see table 8 reverse recovery charge q rr - 1.3 - c v r =400v, i f =2a,d i f /d t =100a/s; see table 8 peak reverse recovery current i rrm - 15 - a v r =400v, i f =2a,d i f /d t =100a/s; see table 8 tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 20 40 60 80 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 20 40 60 80 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 10 20 30 40 50 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 5 10 15 20 25 30 0.300 0.500 0.700 20 v 10 v 6 v 7 v 5.5 v 6.5 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [normalized] -50 -25 0 25 50 75 100 125 150 0.000 0.500 1.000 1.500 2.000 2.500 3.000 r ds(on) =f( t j ); i d =5.6a; v gs =10v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 20 40 60 80 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 120 v 400 v v gs =f( q gate ); i d =5.6apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 10 2 125 c 25 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 10 20 30 40 50 60 e as =f( t j ); i d =4.0a; v dd =50v tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -50 -25 0 25 50 75 100 125 150 540 550 560 570 580 590 600 610 620 630 640 650 660 670 680 690 v br(dss) =f( t j ); i d =1ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 10 5 ciss coss crss c =f( v ds ); v gs =0v; f =250khz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0 1 2 3 4 5 e oss = f (v ds ) tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
11 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
12 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet 6packageoutlines figure1outlinepg-to252-3,dimensionsinmm/inches tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
13 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet 7appendixa table11relatedlinks ? ifxcoolmos tm p7webpage: www.infineon.com ? ifxcoolmos tm p7applicationnote: www.infineon.com ? ifxcoolmos tm p7simulationmodel: www.infineon.com ? ifxdesigntools: www.infineon.com tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
14 600vcoolmosap7powertransistor IPD60R180P7 rev.2.1,2017-02-17 final data sheet revisionhistory IPD60R180P7 revision:2017-02-17,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.0 2017-02-03 release of final version 2.1 2017-02-17 modified safe operating area diagrams on page 7 trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2017infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie). withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseofthe productofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityofcustomers technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab 1 2 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d

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